摘要:超薄基体埋氧全耗尽绝缘层基硅(Ultra Thin body and BOX- Fully Depleted - silicon on insulator,UTBB-FD-SOI,以下简称FD-SOI),是一种基于两大创新来实现平面晶体管结构的工艺技术:一是,在体硅中引入了超薄的埋氧(BOX)层,作为绝缘层;二是,用超薄的顶硅层制造出全耗尽的晶体管沟道。FD-SOI最大的特点是可以在无需全面改造设备结构、完整性和生产流程的前提下实现摩尔定律下的芯片面积微缩、能耗节省、性能提升及功能拓展。FD-SOI晶体管的结构如图1所示。
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